Sylvain Barraud received the Ph.D. degree from the Paris-Sud University, Orsay, France, in 2001. From 1998 to 2001, he worked at Institut d’Electronique Fondamentale (IEF), Orsay, France, on modeling and simulation of electron transport in field-effect transistors using Monte-Carlo method.
He joined the French Atomic Energy Commission Laboratory (CEA-LETI), Grenoble, as a research staff member in 2001. From 2001 to 2009, he was engaged in the physics and modeling of transport in advanced MOSFET devices. Since 2010, his research activity is focused on innovative device integration. He has been involved in several industrial, European and national projects. His current research interests include the device physics, the fabrication and characterization of nanowire-based devices including tri-gate, omega-gate, stacked-gate-all-around nanowire MOSFETs and single electron nanodevices. He has authored or co-authored about 150 papers published in international journals and conferences.