RAISEI MIZOKUCHI

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Institution: CEA-INAC
Title: PhD Student
Location: France
Phone: +33 (0) 4 38 78 40 89
E-mail: Raisei.MIZOKUCHI@cea.fr

 

 

 

 

 

 

Working on gated Hall bar device on undoped Ge/Si­0.2Ge0.8 (Fig. a). At 300 mK, a zero field peak was observed due to weak anti-localization effect (Fig. b, red lines) and Iordanskii–Lyanda-Geller–Pikus theory with cubic spin orbit interaction shows a good agreement (Fig. b blue lines). We extract the phase and spin relaxation time (Fig. c) and calculate the spin splitting energy at zero field to be equal to 1.5 meV at the maximum.